Heverlee, Belgium

Moustafa Y Ghannam

This inventor holds 1 USPTO granted patent. Top assignee: Imec Vzw. Active years: 1992.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Moustafa Y Ghannam. Retrieved from https://idiyas.com/inventor/moustafa-y-ghannam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1992

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1 patent (USPTO):Explore Patents

Title: Moustafa Y Ghannam: Innovator in Semiconductor Technology

Introduction

Moustafa Y Ghannam is a notable inventor based in Leuven-Heverlee, Belgium. He has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar transistors. His innovative approach has led to advancements that enhance the performance of electronic devices.

Latest Patents

Moustafa Y Ghannam holds a patent for a "Method of producing a bipolar transistor having an amorphous emitter." This invention describes a bipolar hetero-junction transistor with an emitter formed from doped and hydrogenated semiconductor material, which is partially in amorphous form. The design achieves a high current gain due to the wide bandgap in the emitter material. The preferred emitter layer consists of microcrystalline silicon, which is doped and hydrogenated, resulting in a small base resistance that is advantageous for high-frequency applications. The production of this amorphous bipolar hetero-junction transistor can be accomplished using CVD techniques, plasma, or photodissociation.

Career Highlights

Moustafa Y Ghannam is associated with the Interuniversitair Microelektronica Centrum (imec), a leading research institution in microelectronics. His work at imec has positioned him at the forefront of semiconductor research and innovation. His contributions have been instrumental in advancing the capabilities of electronic components.

Collaborations

Moustafa has collaborated with esteemed colleagues such as Robert Mertens and Johan F Nijs. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of microelectronics.

Conclusion

Moustafa Y Ghannam's work in semiconductor technology exemplifies the impact of innovative thinking on the development of advanced electronic components. His patent for a bipolar transistor with an amorphous emitter showcases his commitment to enhancing the performance of electronic devices. His contributions continue to influence the field and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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