Hino, Japan

Motohiro Matsuyama

USPTO Granted Patents = 6 

Average Co-Inventor Count = 2.1

ph-index = 3

Forward Citations = 73(Granted Patents)


Location History:

  • Tachikawa, JP (2011 - 2012)
  • Hino, JP (2013 - 2015)

Company Filing History:


Years Active: 2011-2015

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6 patents (USPTO):Explore Patents

Title: Motohiro Matsuyama: Innovator in Memory Systems

Introduction

Motohiro Matsuyama is a prominent inventor based in Hino, Japan. He has made significant contributions to the field of memory systems, holding a total of 6 patents. His work primarily focuses on enhancing the efficiency and reliability of NAND-type flash memory systems.

Latest Patents

One of Matsuyama's latest patents is a memory system that incorporates NAND-type flash memory and a memory controller with a shift read controller and threshold voltage comparison module. This innovative system includes a comparison module that compares the threshold voltage distributions of memory areas to detect errors in data. If an error is identified, the memory controller determines the cause and inhibits data movement operations based on the findings. Another notable patent is a data storage apparatus that features a channel controller, an encoding module, and a data controller. This apparatus is designed to manage data input and output for nonvolatile memories while ensuring effective error correction processes.

Career Highlights

Matsuyama is currently employed at Kabushiki Kaisha Toshiba, where he continues to develop cutting-edge memory technologies. His work has significantly impacted the efficiency of data storage solutions, making them more reliable and effective for various applications.

Collaborations

Matsuyama has collaborated with notable colleagues such as Kyosuke Takahashi and Tohru Fukuda. Their combined expertise has contributed to the advancement of memory system technologies.

Conclusion

Motohiro Matsuyama's innovative work in memory systems has led to several important patents that enhance the functionality and reliability of NAND-type flash memory. His contributions continue to shape the future of data storage technology.

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