Rehovoth, Israel

Moshe Karni


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Moshe Karni

Introduction

Moshe Karni is a notable inventor based in Rehovoth, Israel. He has made significant contributions to the field of data storage technology. His innovative work has led to the development of a unique patent that enhances the functionality of solid-state drives (SSDs).

Latest Patents

Karni holds a patent for "Multiple command format interpretation for SSD." This invention allows a data storage device to utilize both a legacy long command format and a compressed/improved command format. The alternate command format is concealed from most parts of the NAND, enabling a layer that translates compressed or non-standard commands into the legacy format for compatibility with the NAND device's logic. The Low Level Flow Sequencer (LLFS) and the flash interface module (FIM) are designed to recognize the selected command format, ensuring efficient encoding and transmission of commands to the NAND.

Career Highlights

Moshe Karni has been instrumental in advancing SSD technology through his work at SanDisk Technologies Inc. His expertise in command format interpretation has positioned him as a key figure in the industry. With a focus on improving data storage efficiency, Karni's contributions have been recognized within the tech community.

Collaborations

Throughout his career, Karni has collaborated with talented individuals such as Amit Alon and Shay Benisty. These partnerships have fostered innovation and have played a crucial role in the development of cutting-edge technologies in the field of data storage.

Conclusion

Moshe Karni's innovative spirit and dedication to advancing SSD technology have made a lasting impact on the industry. His patent for multiple command format interpretation exemplifies his commitment to enhancing data storage solutions.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…