Moshe Eizenberg

Title: The Innovations of Moshe Eizenberg

Introduction

Moshe Eizenberg is a notable inventor based in Kiryat Ata, Israel. He has made significant contributions to the field of semiconductor technology, particularly in the development of low-resistance contacts to silicon. His work has implications for the fabrication of very large scale integration (VLSI) devices, which are essential in modern electronics.

Latest Patents

Eizenberg holds a patent for "Forming low-resistance contact to silicon." This innovative process involves annealing a titanium-rich carbide film deposited on silicon. In a single processing step, it produces both a stable titanium silicide contact and a titanium carbide diffusion barrier. This advancement provides reliable low-resistance contacts to VLSI devices in a cost-effective fabrication sequence. The patent also describes other metallization systems that utilize a silicide and a diffusion barrier to aluminum formed in a single processing step.

Career Highlights

Moshe Eizenberg has had a distinguished career at AT&T Bell Laboratories, where he has been involved in groundbreaking research and development. His work has not only advanced the understanding of semiconductor materials but has also contributed to the practical applications of these technologies in the industry.

Collaborations

Eizenberg has collaborated with various professionals in his field, including his coworker Shyam P Murarka. These collaborations have fostered innovation and have led to the development of new technologies that enhance semiconductor performance.

Conclusion

Moshe Eizenberg's contributions to semiconductor technology, particularly through his patent for low-resistance contacts to silicon, highlight his role as a key innovator in the field. His work continues to influence the development of efficient and cost-effective solutions in electronics.