Company Filing History:
Years Active: 1978
Title: The Innovative Contributions of Moshe Balog in Silicon Carbide Technology
Introduction
Moshe Balog is a distinguished inventor based in Jerusalem, Israel, known for his innovative contributions to the field of semiconductor technology. He holds a notable patent that focuses on the method for forming smooth self-limiting and pinhole-free silicon carbide (SiC) films on silicon (Si) substrates. His work has significant implications for the advancement of materials in various applications.
Latest Patents
Balog's patent titled "Method for forming smooth self-limiting and pinhole-free SiC films on Si" represents a breakthrough in the production of protective silicon carbide films. This innovative method allows for the simultaneous formation of silicon carbide on all surfaces of a silicon substrate. The process involves placing the substrate in a susceptor with tantalum carbide surfaces and utilizing a high purity ambient. The substrate is initially heated to approximately 1250°C to eliminate native SiO₂, followed by cooling to about 900°C where methane is added. This procedure results in a layer of carbon that reacts with the silicon substrate at high temperatures to create a smooth, pinhole-free film.
Career Highlights
Moshe Balog is associated with International Business Machines Corporation (IBM), where he has made significant contributions to research and development in semiconductor manufacturing. His experience and expertise in creating advanced materials have solidified his reputation as a leading inventor in the industry.
Collaborations
Throughout his career, Balog has collaborated with esteemed colleagues, including Melvin Berkenblit and See-Ark Chan. These collaborations highlight the importance of teamwork and shared knowledge in driving innovation and achieving groundbreaking results in their respective fields.
Conclusion
In summary, Moshe Balog's contributions to the development of silicon carbide technology reflect his dedication to innovation in the semiconductor industry. His unique approach to forming quality SiC films on silicon substrates not only demonstrates his expertise but also paves the way for future advancements in material science. As technologies evolve, the impact of his work will likely continue to resonate within the scientific community and beyond.