Company Filing History:
Years Active: 2021
Title: Minyi Dai: Innovator in Spin-Orbit Torque Magnetoresistive Random Access Memory
Introduction
Minyi Dai is a prominent inventor based in Madison, WI (US). He has made significant contributions to the field of memory technology, particularly in the development of advanced memory cells.
Latest Patents
Minyi Dai holds a patent for "Spin-orbit torque magnetoresistive random access memory with magnetic field-free current-induced perpendicular magnetization reversal." This innovative technology involves Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) cells that can switch their magnetization direction without the need for an in-plane magnetic field. The SOT-MRAM cells utilize cobalt-iron-boron alloys, cobalt-iron alloys, metallic cobalt, and/or metallic iron as the ferromagnetic free layer in a magnetic tunnel junction. By optimizing the ferromagnetic layer's lateral dimensions and applying an appropriate charge current density, deterministic perpendicular magnetization switching is achieved.
Career Highlights
Minyi Dai is associated with the Wisconsin Alumni Research Foundation, where he continues to push the boundaries of memory technology. His work has garnered attention for its potential applications in next-generation computing systems.
Collaborations
One of his notable collaborators is Jiamian Hu, with whom he has worked on various projects related to memory technology.
Conclusion
Minyi Dai's innovative work in SOT-MRAM technology represents a significant advancement in the field of memory systems. His contributions are paving the way for future developments in efficient and high-performance memory solutions.