Belmont, MA, United States of America

Minlan Yu

USPTO Granted Patents = 1 

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2024

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Minlan Yu: Innovator in Fault Tolerant Memory Solutions

Introduction

Minlan Yu is a prominent inventor based in Belmont, MA (US). He is known for his innovative contributions to the field of memory frameworks, particularly in developing solutions that enhance fault tolerance in remote memory systems. His work has significant implications for improving application performance and reducing latency in computing environments.

Latest Patents

Minlan Yu holds a patent for a "Fault Tolerant Disaggregated Memory." This patent describes a low-latency, low-overhead fault tolerant remote memory framework. The framework efficiently packs similar-size in-memory objects into individual page-aligned spans and applies erasure coding on these spans. It fully utilizes efficient one-sided remote memory accesses (RMAs) to swap spans in and out with minimal network input/outputs (I/Os). The compaction techniques employed in this framework help reduce remote memory fragmentation. As a result, it can achieve lower tail latency and higher application performance compared to other fault tolerance solutions, albeit at the cost of potentially increased memory usage.

Career Highlights

Minlan Yu is currently employed at Google Inc., where he continues to push the boundaries of memory technology. His work is characterized by a commitment to enhancing the efficiency and reliability of memory systems in modern computing.

Collaborations

Minlan has collaborated with notable colleagues, including Yang Zhou and Hassan Mohamed Gamal Hassan Wassel. These collaborations have contributed to the advancement of innovative solutions in the field of memory frameworks.

Conclusion

Minlan Yu's contributions to fault tolerant memory solutions exemplify the impact of innovative thinking in technology. His work not only addresses current challenges in memory management but also sets the stage for future advancements in the field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…