Minh V Le

Title: Minh V Le: Innovator in Non-Volatile Memory Technology

Introduction

Minh V Le is a prominent inventor based in Richmond, CA, known for his significant contributions to the field of non-volatile memory technology. With a total of five patents to his name, he has made notable advancements that enhance the performance and reliability of electronic memory systems.

Latest Patents

One of Minh V Le's latest patents is titled "Indirect measurement of negative margin voltages in endurance testing of EEPROM cells." This invention presents an electronic test structure and method for testing non-volatile memory cells. The structure includes a first transistor coupled in series to a floating gate transistor, where a source of the first transistor is connected to a positive power supply voltage, and a source of the floating gate transistor is connected to a power supply ground. Additionally, the gate of the first transistor is coupled to its own source, while a second transistor is connected in series with a memory cell, with its source also linked to a positive power supply voltage and its gate connected to the drain of the first transistor.

Career Highlights

Minh V Le is currently employed at Atmel Corporation, where he continues to innovate and develop cutting-edge technologies in the field of memory systems. His work has significantly impacted the efficiency and effectiveness of electronic devices that rely on non-volatile memory.

Collaborations

Throughout his career, Minh has collaborated with talented individuals such as Jinshu Son and Liqi Wang. These partnerships have fostered a creative environment that encourages the development of innovative solutions in memory technology.

Conclusion

Minh V Le's contributions to non-volatile memory technology through his patents and work at Atmel Corporation highlight his role as a key innovator in the field. His advancements continue to shape the future of electronic memory systems.