Company Filing History:
Years Active: 2019
Title: The Innovative Contributions of Ming Xi
Introduction
Ming Xi is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, particularly in the growth of III-V-nitride materials. His innovative approach has led to advancements that enhance the efficiency of light-emitting diodes.
Latest Patents
Ming Xi holds a patent for a substrate used for III-V-nitride growth and the manufacturing method thereof. This patent outlines a method that includes several key steps: first, providing a growth substrate and forming a buffer layer on its surface for subsequent growth of a luminescent epitaxial structure. Next, a semiconductor dielectric layer is formed on the buffer layer. The process involves etching semiconductor dielectric protrusions arranged at intervals on the dielectric layer, exposing the buffer layer between these protrusions. This method not only ensures the crystal quality of the grown luminescent epitaxial structure but also improves the luminescent efficiency of light-emitting diodes. The simplicity of the process makes it advantageous for reducing manufacturing costs and suitable for industrial production.
Career Highlights
Ming Xi is currently associated with Chip Foundation Technology Ltd., where he continues to push the boundaries of semiconductor research and development. His work has been instrumental in advancing technologies that are critical for modern electronic devices.
Collaborations
Ming Xi has collaborated with notable colleagues such as Maosheng Hao and Genru Yuan. Their combined expertise has fostered an environment of innovation and creativity, leading to significant advancements in their field.
Conclusion
Ming Xi's contributions to semiconductor technology, particularly through his patented methods for III-V-nitride growth, highlight his role as a key innovator in the industry. His work not only enhances the efficiency of light-emitting diodes but also paves the way for future advancements in semiconductor manufacturing.