Kawasaki, Japan

Mineo Goto

This inventor holds 1 USPTO granted patent. Top assignee: Kabushiki Kaisha Toshiba. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mineo Goto. Retrieved from https://idiyas.com/inventor/mineo-goto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Mineo Goto

Introduction

Mineo Goto is a notable inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have paved the way for advancements in photomask technology.

Latest Patents

Mineo Goto holds a patent for a method of forming a photomask and a method of manufacturing a semiconductor device. This patent describes a process where resist film patterns are formed on a light shielding film on a glass substrate. The resist film patterns cover specific regions of the substrate's surface. Using these patterns as a mask, the light shielding film is then patterned to create a light shielding film pattern. An important feature of this method is the use of a dummy pattern in the process.

Career Highlights

Mineo Goto is associated with Kabushiki Kaisha Toshiba, a leading company in technology and electronics. His work has contributed to the company's reputation for innovation in semiconductor technology.

Collaborations

Mineo Goto has collaborated with notable coworkers such as Shigeru Hasebe and Osamu Ikenaga. Their combined expertise has further enhanced the development of advanced technologies in their field.

Conclusion

Mineo Goto's contributions to semiconductor manufacturing and photomask technology highlight his role as an influential inventor. His innovative methods continue to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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