Seoul, South Korea

Min-Soo Youm


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 14(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: **Min-Soo Youm: Innovator in Phase-Change RAM Technology**

Introduction

Min-Soo Youm, an accomplished inventor residing in Seoul, South Korea, is recognized for his significant contributions to the field of memory technology through his innovative work on phase-change RAM (PCRAM). His expertise and unique approach to the design of electronic components have led to advancements that enhance the performance and reliability of modern computing devices.

Latest Patents

Youm holds a notable patent for his invention titled "Phase-change RAM containing AIN thermal dissipation layer and TiN electrode." This invention features a sophisticated architecture that includes a substrate, a lower electrode, a phase-change material, an upper electrode, and a thermal dissipation layer. The thermal dissipation layer is composed of aluminum nitride, which exhibits high heat conductivity. This design allows for efficient heat management, as the titanium nitride lower electrode generates substantial heat with minimal current. By preventing heat transfer to the interior of devices, this innovation facilitates rapid operation and enhances the overall reliability of electronic systems.

Career Highlights

Currently, Min-Soo Youm is associated with the Korea Institute of Science and Technology, where he applies his skills and knowledge to advance scientific research in the realm of memory technologies. His work not only reflects his commitment to innovation but also his dedication to improving the functional capabilities of electronic devices.

Collaborations

Throughout his career, Youm has collaborated with several notable researchers, including Seong-Il Kim and Yong-Tae Kim. Together, they have worked on various projects that advance the understanding and capabilities of phase-change materials, contributing substantially to the scientific community's knowledge base.

Conclusion

Min-Soo Youm stands out as an inventive force in the technology sector with his pioneering work on phase-change RAM. His patent reflects a deep understanding of electrical engineering principles and a commitment to developing technologies that enhance device performance. As advancements in memory technology continue to evolve, Youm’s contributions are sure to play a crucial role in shaping the future of electronic devices.

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