Milton Feng

Title: Milton Feng: Innovator in Semiconductor Technology

Introduction

Milton Feng is a prominent inventor based in Colorado Springs, CO (US). He has made significant contributions to the field of semiconductor technology, particularly in the growth of P type Group III-V compound semiconductors.

Latest Patents

Milton Feng holds 2 patents. His latest patent focuses on the growth of P type GaAs on silicon using a metal organic chemical vapor deposition process. This innovative method involves reducing the molecular ratio of arsenic to gallium in the growth ambient, which creates donor site vacancies in the GaAs layer. These vacancies are then occupied by acceptor carbon atoms, resulting in a buffer GaAs layer with P type majority carrier characteristics. The process begins with an MOCVD at a reduced temperature to form a thin nucleation layer, followed by a temperature ramp to grow the buffer layer while maintaining an optimal V/III mole ratio.

Career Highlights

Milton Feng is associated with Ford Microelectronics, Inc., where he continues to advance semiconductor technologies. His work has been instrumental in developing methods that enhance the efficiency and performance of semiconductor materials.

Collaborations

Some of his notable coworkers include Chris R Ito and David G McIntyre, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Milton Feng's innovative work in semiconductor technology has paved the way for advancements in the industry. His contributions, particularly in the growth of P type semiconductors, highlight his role as a key inventor in this field.