Osaka, Japan

Michiro Goto


Average Co-Inventor Count = 6.0

ph-index = 1


Location History:

  • Osaka, JP (2013)
  • Ibaraki, JP (2015)

Company Filing History:


Years Active: 2013-2015

Loading Chart...
2 patents (USPTO):

Title: Michiro Goto: Innovator in Polyurethane Technology

Introduction

Michiro Goto is a notable inventor based in Osaka, Japan. He has made significant contributions to the field of polyurethane technology, holding 2 patents that showcase his innovative approach to material science. His work focuses on developing practical applications for polyurethane, particularly in the areas of film formation and polishing pads.

Latest Patents

Goto's latest patents include a polyurethane aqueous dispersion and a formed film obtained from the same. This invention is characterized by its practical utility in processing suitability when a formed film is produced by the salt coagulation method. The formed film exhibits resistance against ethanol water, making it suitable for various applications. Additionally, he has developed a polyurethane foam that, despite its low specific gravity, possesses favorable hardness and elasticity for use in polishing pads. This foam is created by reacting a blend composition that includes polyisocyanate, polyol, and a chain extender.

Career Highlights

Throughout his career, Michiro Goto has worked with prominent companies such as Toyo Polymer Co., Ltd. and Nitta Haas Inc. His experience in these organizations has allowed him to refine his expertise in polyurethane technology and contribute to advancements in the field.

Collaborations

Goto has collaborated with notable colleagues, including Kenji Shimizu and Yoshio Seki. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Michiro Goto's contributions to polyurethane technology highlight his role as an influential inventor. His patents reflect a commitment to developing materials with practical applications, showcasing the importance of innovation in material science.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…