Michel Betirac

Title: Michel Betirac: Innovator in Non-Volatile Memory Technology

Introduction

Michel Betirac is a notable inventor based in Seyssinet, France. He has made significant contributions to the field of memory technology, particularly in the development of non-volatile memory cells. His innovative work has led to the creation of a unique memory cell design that enhances data retention and reliability.

Latest Patents

Michel Betirac holds a patent for a non-volatile random access memory cell utilizing CMOS transistors. This invention relates to a non-volatile static memory cell that comprises a bistable flip-flop with four transistors, featuring two complementary outputs. The design includes a non-volatile storage element made up of two complementary transistors in series, specifically a p-channel transistor and an n-channel transistor. These transistors share a common floating grid and a common control grid. A charge injection zone is strategically placed on the side of the source region of the n-channel transistor, which is connected to one output of the flip-flop, while the control grid connects to the other output. This innovative approach allows for repositioning without reversing the original state of the flip-flop.

Career Highlights

Michel Betirac is associated with the company Société pour l'Étude et la Fabrication de Circuits Intégrés Spéciaux. His role in this organization has allowed him to further his research and development in integrated circuit technologies, particularly in memory solutions.

Conclusion

Michel Betirac's contributions to non-volatile memory technology exemplify the innovative spirit of modern inventors. His work continues to influence advancements in memory cell design and functionality.