Company Filing History:
Years Active: 2015-2018
Title: Michael William Moseley: Innovator in Semiconductor Technology
Introduction
Michael William Moseley is a prominent inventor based in Atlanta, GA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of group-III nitride semiconductor alloys. With a total of 2 patents, his work has advanced the understanding and application of these materials in various technological domains.
Latest Patents
Moseley's latest patents include innovative systems and methods for growing non-phase separated group-III nitride semiconductor alloys. One of his patents details a method for molecular beam epitaxy (MBE) growth of these alloys, which involves establishing an average reaction temperature range from about 250°C to about 850°C. The process includes introducing a nitrogen flux at a specific flow rate and a first metal flux at a designated flow rate. Additionally, the first metal flux is periodically stopped and restarted according to a first flow duty cycle. This method allows for the production of various alloys, including AlN, InN, GaN, InGaN, and AlInGaN.
Career Highlights
Moseley is affiliated with the Georgia Tech Research Corporation, where he continues to push the boundaries of semiconductor research. His work has not only contributed to academic knowledge but has also paved the way for practical applications in the industry.
Collaborations
One of his notable collaborators is William Alan Doolittle, with whom he has worked on various projects related to semiconductor technology.
Conclusion
Michael William Moseley's contributions to the field of semiconductor technology through his innovative patents and collaborations highlight his role as a key figure in advancing this critical area of research. His work continues to influence the development of new materials and methods in the semiconductor industry.