Gottingen, Germany

Michael Seibt

USPTO Granted Patents = 1 

 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Michael Seibt: Innovator in Semiconductor Technology

Introduction

Michael Seibt is a notable inventor based in Göttingen, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for recrystallization of semiconductor surfaces. His work has implications for the efficiency and performance of semiconductor devices.

Latest Patents

Michael Seibt holds a patent for a "Method for recrystallization of preamorphized semiconductor surfaces." This method involves thermal annealing of amorphous surface layers on a single-crystal semiconductor base element. The amorphous surface layer is created by implanting germanium or silicon ions into a single-crystal silicon base element. The process includes a three-step annealing procedure, which enhances the quality of the semiconductor surface.

Career Highlights

Seibt is currently associated with Telefunken Electronic GmbH, where he continues to advance his research and development efforts. His patent demonstrates his expertise in semiconductor technology and his commitment to innovation in this critical field.

Collaborations

Throughout his career, Michael has collaborated with esteemed colleagues such as Heinz-Achim Hefner and Joachim Imschweiler. These partnerships have contributed to the advancement of semiconductor technologies and have fostered a collaborative environment for innovation.

Conclusion

Michael Seibt's contributions to semiconductor technology through his innovative patent highlight his role as a key inventor in the field. His work not only enhances the understanding of semiconductor surfaces but also paves the way for future advancements in technology.

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