Company Filing History:
Years Active: 1997-2002
Title: Michael Rubin: Innovator in Gallium Nitride Technology
Introduction
Michael Rubin is a distinguished inventor based in Berkeley, California. He has made significant contributions to the field of materials science, particularly in the development of gallium nitride (GaN) films. With a total of four patents to his name, Rubin's work has the potential to impact various applications in electronics and optoelectronics.
Latest Patents
Rubin's latest patents focus on the innovative method of growing gallium nitride films using molecular beam epitaxy (MBE) in the presence of bismuth. This method allows for the fabrication of GaN films at temperatures of about 1000 K or less. The films can be doped with magnesium or other dopants, enhancing their properties. Notably, when bismuth is used as a surfactant, the resulting two-dimensional gallium nitride crystal sizes range between 10 µm and 20 µm. This size is 20 to 40 times larger than those observed in similar conditions without bismuth. The increase in crystal size is attributed to bismuth's role in enhancing the surface diffusion coefficient for gallium, leading to improved material quality.
Career Highlights
Michael Rubin is affiliated with the University of California, where he conducts his research and development work. His innovative approaches and findings have positioned him as a key figure in the advancement of gallium nitride technology.
Collaborations
Rubin collaborates with notable colleagues, including Nathan Newman and Christian K Kisielowski. Their combined expertise contributes to the ongoing research and development in the field of materials science.
Conclusion
Michael Rubin's contributions to gallium nitride technology through his innovative patents and collaborations highlight his role as a leading inventor in the field. His work continues to pave the way for advancements in electronic materials.