Williston, VT, United States of America

Michael L Kerbaugh

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2016-2017

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2 patents (USPTO):

Title: Michael L. Kerbaugh: Innovator in Bipolar Junction Transistor Technology

Introduction

Michael L. Kerbaugh is a notable inventor based in Williston, Vermont, recognized for his significant contributions to the field of semiconductor technology. With two patents to his name, he has made impactful advancements in the design and fabrication of bipolar junction transistors.

Latest Patents

Michael's most recent patents focus on enhancing bipolar junction transistor structures, particularly through innovative methods applied to silicon-on-insulator substrates. His first patent, titled "Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness - Methods of forming bipolar device structures and bipolar device structures," describes a process where an opening is formed in a device layer that extends to a buried insulator layer. The intrinsic base layer is developed through lateral growth along the sidewalls of the opening, allowing for sophisticated bipolar transistor arrangements. The second patent, "Bipolar transistor with extrinsic base region and methods of fabrication," outlines an integrated circuit structure featuring distinct intrinsic and extrinsic base regions, highlighting a more efficient design for semiconductor layers, crucial for modern electronic devices.

Career Highlights

Throughout his career, Michael Kerbaugh has been affiliated with GlobalFoundries Inc., a leader in semiconductor manufacturing. His work involves cutting-edge research and technology in the production of integrated circuits, demonstrating his vital role in the advancement of electronic components.

Collaborations

Collaborating with esteemed colleagues David Louis Harame and Qizhi Liu, Michael has contributed to the collective knowledge within the semiconductor field. Their joint efforts have fostered further innovations and applications of bipolar junction transistor technology.

Conclusion

Michael L. Kerbaugh's contributions to semiconductor innovations exemplify the dynamic nature of modern technology. His patents reflect a commitment to enhancing electronic device performance, and his collaboration with fellow innovators ensures that the development of bipolar junction transistors continues to evolve. Through his work, Michael maintains an influential presence in the world of inventions and technology.

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