Michael Allen

Title: Michael Allen - Innovator in Semiconductor Technology

Introduction

Michael Allen is a notable inventor based in Buda, Texas, who has made significant contributions to the field of semiconductor technology. He holds one patent that showcases his expertise and innovative approach to non-volatile memory fabrication.

Latest Patents

His patent, titled "Method of forming oxide-nitride-oxide stack of non-volatile memory and integration to CMOS process flow," describes a fabrication method for semiconductor devices. This method involves forming a customizable oxide-nitride-oxide (ONO) stack over a substrate using an in-situ atomic layer deposition (ALD) tool or chamber. The process includes radical oxidation or oxide deposition steps to create a tunnel dielectric layer over the substrate. Additionally, silicon nitride deposition steps are performed to establish a multi-layer charge trapping (CT) layer, with adjustments made to the process parameters during the formation of the CT sub-layers. Finally, further radical oxidation or oxide deposition steps are executed in the ALD tool to create a blocking dielectric layer over the multi-layer CT layer.

Career Highlights

Michael Allen is currently employed at Infineon Technologies LLC, where he continues to advance his work in semiconductor technology. His innovative methods contribute to the development of more efficient and effective non-volatile memory solutions.

Collaborations

He collaborates with Krishnaswamy Ramkumar, leveraging their combined expertise to push the boundaries of semiconductor innovation.

Conclusion

Michael Allen's contributions to semiconductor technology through his patent demonstrate his commitment to innovation in the field. His work at Infineon Technologies LLC continues to influence the development of advanced memory solutions.