Company Filing History:
Years Active: 1985
Title: Mervat Faltas: Innovator in Silicon Photodiode Technology
Introduction
Mervat Faltas is a notable inventor based in Kirkland, CA. She has made significant contributions to the field of photodiode technology. Her innovative work has led to the development of a unique silicon photodiode that enhances performance and efficiency.
Latest Patents
Mervat Faltas holds a patent for a "Silicon photodiode with n-type control layer." This invention features a p-n-n silicon photodiode that incorporates an n-type control layer extending into the silicon body. This design improves junction resistance and simplifies the manufacturing process by reducing the number of processing steps required. The method involves implanting arsenic or antimony into the surface of a n-type silicon body before passivating the surface and forming a p-type region.
Career Highlights
Throughout her career, Mervat has demonstrated a commitment to advancing technology in her field. She has worked at RCA Inc., where she has been able to apply her expertise in semiconductor technology. Her innovative approach has garnered attention and respect within the industry.
Collaborations
Mervat has collaborated with esteemed colleagues such as Tsuneo Yamazaki and Paul P Webb. These partnerships have allowed her to further enhance her research and development efforts.
Conclusion
Mervat Faltas is a pioneering inventor whose work in silicon photodiode technology has made a lasting impact. Her contributions continue to influence advancements in the field, showcasing her dedication to innovation and excellence.