Company Filing History:
Years Active: 2021
Title: Mei Shen - Innovator in 3D Resistive Random-Access Memory Technology
Introduction
Mei Shen is a prominent inventor based in Shenzhen, China. She has made significant contributions to the field of memory technology, particularly with her innovative work on three-dimensional resistive random-access memory (3D-RRAM). Her research focuses on enhancing memory efficiency and performance, which is crucial in today's data-driven world.
Latest Patents
Mei Shen holds a patent for a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM). This invention discloses a novel approach to memory design, comprising a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell includes a resistive layer that can be switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs can achieve different resistances, allowing for improved data storage capabilities.
Career Highlights
Mei Shen is affiliated with the Southern University of Science and Technology, where she continues to advance her research in memory technologies. Her work has garnered attention for its potential applications in various electronic devices, making her a key figure in the field.
Collaborations
Mei Shen collaborates with esteemed colleagues, including Guobiao Zhang and Yida Li. Their combined expertise contributes to the innovative research environment at the Southern University of Science and Technology.
Conclusion
Mei Shen's contributions to the development of 3D-RRAM technology highlight her role as a leading inventor in the field of memory systems. Her innovative approach promises to enhance data storage solutions, paving the way for future advancements in technology.