Company Filing History:
Years Active: 1993
Title: Mei Shaw-Ning: Innovator in Bipolar Transistor Technology
Introduction
Mei Shaw-Ning is a prominent inventor based in Wappingers Falls, NY (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar transistors. Her innovative approach has led to advancements that enhance the performance and efficiency of electronic devices.
Latest Patents
Mei Shaw-Ning holds a patent for a method of making a bipolar transistor with reduced topography. This invention involves constructing a vertical bipolar transistor with a reduced step height by co-deposition of a polysilicon base contact member and an epitaxial device layer. This method places the base contact below the device surface, utilizing a doped glass layer as a dopant source for the base contact. The doped glass layer also serves as a dielectric separating the base contact from the emitter contact and acts as an etch stop during the formation of the base implantation aperture. This innovative technique has the potential to improve the performance of bipolar transistors significantly.
Career Highlights
Mei Shaw-Ning is currently employed at International Business Machines Corporation (IBM), where she continues to work on cutting-edge technologies in the semiconductor industry. Her expertise and innovative mindset have made her a valuable asset to her team and the company.
Collaborations
Throughout her career, Mei has collaborated with notable colleagues, including Shao-Fu S Chu and Kyong-Min Kim. These collaborations have fostered an environment of innovation and creativity, leading to advancements in their respective fields.
Conclusion
Mei Shaw-Ning is a trailblazer in the field of bipolar transistor technology, with her innovative patent contributing to the advancement of electronic devices. Her work at IBM and collaborations with esteemed colleagues highlight her commitment to innovation and excellence in the semiconductor industry.