Meg Freebern

Title: Meg Freebern: Innovator in Semiconductor Memory Technology

Introduction

Meg Freebern is a notable inventor based in Richmond, Vermont, who has made significant contributions to the field of semiconductor memory technology. With a focus on enhancing the efficiency of memory devices, she has developed innovative solutions that address common challenges in the industry.

Latest Patents

Meg Freebern holds a patent for a "write burst stop function in low power DDR sDRAM." This invention provides a write burst stop command function specifically designed for semiconductor memory devices, particularly those with write latency, such as low power double data rate (DDR) dynamic random access memory (DRAM) devices. The patent outlines a method where, upon receiving a write stop command, the pulses generated for a column address strobe signal are terminated, preventing further data from being transferred into the memory array. This invention also includes a first-in first-out (FIFO) circuit that is reset when the write stop command is received at the beginning of a write operation, thereby introducing a predetermined write latency to the process.

Career Highlights

Meg Freebern has established herself as a key figure in the semiconductor industry through her work at Infineon Technologies AG. Her expertise in memory technology has led to advancements that improve the performance and reliability of memory devices.

Collaborations

Throughout her career, Meg has collaborated with various professionals, including her coworker Josef Schnell, to drive innovation in semiconductor technology. Their combined efforts have contributed to the development of cutting-edge solutions in the field.

Conclusion

Meg Freebern's contributions to semiconductor memory technology exemplify her commitment to innovation and excellence. Her patent for the write burst stop function showcases her ability to address complex challenges in memory devices, solidifying her reputation as a leading inventor in the industry.