Company Filing History:
Years Active: 2006-2008
Title: Mayumi Shigeno: Innovator in Semiconductor Technology
Introduction
Mayumi Shigeno is a prominent inventor based in Kawasaki, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. Her work focuses on the development and evaluation methods for semiconductor devices, showcasing her expertise and innovative spirit.
Latest Patents
Among her latest patents, one notable invention involves a semiconductor device that features a gate insulating film made of silicon oxynitride. This film is strategically disposed on a partial surface area of a semiconductor substrate. A gate electrode is placed on the gate insulating film, with source and drain regions located on both sides of the gate electrode. The patent specifies that the existence ratio of subject nitrogen atoms to the total number of nitrogen atoms in the gate insulating film is 20% or smaller. Each subject nitrogen atom is coupled to silicon atoms, while the remaining bonds are connected to other nitrogen atoms.
Career Highlights
Mayumi Shigeno is currently employed at Fujitsu Corporation, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing the manufacturing and evaluation methods for semiconductor devices.
Collaborations
She has collaborated with notable colleagues, including Mitsuaki Hori and Naoyoshi Tamura, contributing to various projects that enhance the field of semiconductor technology.
Conclusion
Mayumi Shigeno's innovative contributions to semiconductor technology and her ongoing work at Fujitsu Corporation highlight her as a key figure in the industry. Her patents reflect her commitment to advancing technology and improving manufacturing processes.