Maxime Forster

Title: Maxime Forster: Innovator in Semiconductor Doping Technology

Introduction

Maxime Forster is a notable inventor based in Lyons, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for doping semiconductor materials. His work has implications for various applications in electronics and materials science.

Latest Patents

Maxime Forster holds a patent for a "Method for doping a semiconductor material." This patent describes a process where a feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is also placed in the crucible. The content of the crucible is then melted, resulting in the incorporation of the dopant into the molten material bath. The temperature increase is performed under reduced pressure, enhancing the efficiency of the doping process. He has 1 patent to his name.

Career Highlights

Throughout his career, Maxime Forster has worked with several companies, including Apollon Solar and Siltronix. His experience in these organizations has allowed him to develop and refine his expertise in semiconductor technologies. His contributions have been instrumental in advancing the capabilities of semiconductor materials.

Collaborations

Maxime has collaborated with notable professionals in his field, including Erwann Fourmond and Jacky Stadler. These collaborations have fostered innovation and have contributed to the development of new technologies in semiconductor doping.

Conclusion

Maxime Forster is a distinguished inventor whose work in semiconductor doping technology has made a significant impact on the industry. His innovative methods and collaborations continue to influence advancements in the field.