Company Filing History:
Years Active: 2017
Title: The Innovations of Matthew R Parlee
Introduction
Matthew R Parlee is an accomplished inventor based in Lawndale, CA (US). He has made significant contributions to the field of semiconductor technology. His innovative work focuses on enhancing the performance and reliability of field effect transistors (FETs).
Latest Patents
Matthew holds 1 patent for his invention titled "Embedded hydrogen inhibitors for semiconductor field effect transistors." This patent describes a FET device that includes a substrate and multiple semiconductor layers. The top layer is a heavily doped cap layer, while a Schottky barrier layer is positioned directly below it. The design features a gate recess that extends through the cap layer into the Schottky barrier layer. Additionally, the gate terminal comprises a titanium layer, an inhibitor layer, and a gold layer, all strategically arranged to prevent hydrogen gas from dissociating into hydrogen atoms. This innovative approach effectively reduces or prevents hydrogen poisoning of the FET device.
Career Highlights
Matthew is currently employed at Northrop Grumman Systems Corporation, where he continues to push the boundaries of semiconductor technology. His work has garnered attention for its potential to improve the efficiency and longevity of electronic devices.
Collaborations
Matthew has collaborated with notable colleagues, including Yeong-Chang Chou and Richard Lai. Their combined expertise contributes to the advancement of innovative solutions in the semiconductor industry.
Conclusion
Matthew R Parlee's contributions to semiconductor technology exemplify the spirit of innovation. His patented work on embedded hydrogen inhibitors showcases his commitment to enhancing the performance of field effect transistors. Through his career at Northrop Grumman Systems Corporation, he continues to make strides in this critical field.