Company Filing History:
Years Active: 2018-2020
Title: Mathias Bersweiler: Innovator in Magnetoresistance Technology
Introduction
Mathias Bersweiler is a prominent inventor based in Sendai, Japan. He has made significant contributions to the field of magnetoresistance technology, holding two patents that showcase his innovative work. His research focuses on the development of advanced magnetic memory elements, which have important applications in data storage and processing.
Latest Patents
Bersweiler's latest patents include a magnetoresistance effect element and magnetic memory. The first patent describes a magnetoresistance effect element that consists of first and second magnetic layers with a perpendicular magnetization direction. A first non-magnetic layer is positioned adjacent to the first magnetic layer, on the opposite side of the second magnetic layer. An interfacial perpendicular magnetic anisotropy exists at the interface between the first magnetic layer and the first non-magnetic layer, resulting in a magnetization direction that is perpendicular to the surface of the layers. Additionally, the atomic fraction of all magnetic elements in the second magnetic layer is smaller than that in the first magnetic layer.
The second patent further elaborates on the magnetoresistance effect element, emphasizing that the second magnetic layer has a saturation magnetization lower than that of the first magnetic layer. The interfacial magnetic anisotropy energy density at the interface between the first magnetic layer and the first non-magnetic layer is greater than that at the interface between the first non-magnetic layer and the
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