Masuo Koga

Title: Masuo Koga: Innovator in Ion Implantation Technology

Introduction

Masuo Koga is a notable inventor from Nishiwaki, Japan, recognized for his contributions to the field of semiconductor technology. He holds a patent for a high current ion implanter, which has significant implications for the manufacturing of DRAM devices. His innovative approach addresses critical challenges in the ion implantation process.

Latest Patents

Koga's patent, titled "High current ion implanter and method of ion implant by the implanter," focuses on an ion implantation apparatus and process that enhances device characteristics during ion implantation. This technology is designed to eliminate the deterioration of device characteristics in trench capacitors of DRAM while increasing beam current. The high current ion implanter consists of an implantation chamber, a bias plate, a secondary electron implantation cylinder, and an extension cylinder, which is held at ground potential and measures between 10 to 25 cm in length.

Career Highlights

Throughout his career, Masuo Koga has worked with prominent companies in the semiconductor industry, including KTI Semiconductor Ltd. and Texas Instruments Corporation. His experience in these organizations has contributed to his expertise in ion implantation technology and semiconductor manufacturing processes.

Collaborations

Koga has collaborated with notable professionals in the field, including Hirokazu Ueda and Shigeo Yasuda. These collaborations have further enriched his work and contributed to advancements in semiconductor technology.

Conclusion

Masuo Koga's innovative work in ion implantation technology has made a significant impact on the semiconductor industry. His patent for a high current ion implanter showcases his commitment to improving device characteristics and manufacturing processes.