Location History:
- Ninomiya, JP (1992)
- Kanagawa, JP (1992)
Company Filing History:
Years Active: 1992
Title: Masayo Fukuda: Innovator in Semiconductor Technology
Introduction
Masayo Fukuda is a prominent inventor based in Ninomiya, Japan. She has made significant contributions to the field of semiconductor technology, holding two patents that showcase her innovative spirit and technical expertise.
Latest Patents
Fukuda's latest patents include a "Semiconductor IC device with dummy wires" and a "Low-noise output buffer circuit." The semiconductor IC device patent describes a configuration where a plurality of cells provides constituent elements for a semiconductor integrated circuit. This design includes dummy wires connected to an internal power source terminal, which helps prevent voltage fluctuations. The low-noise output buffer circuit patent features a P-channel MOSFET and an N-channel MOSFET, working together to output power and ground potentials based on input signals, enhancing the performance of electronic devices.
Career Highlights
Masayo Fukuda is currently employed at Kabushiki Kaisha Toshiba, where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in developing innovative solutions that address the challenges faced in the electronics industry.
Collaborations
Fukuda has collaborated with notable colleagues such as Satoshi Wada and Shinichi Wakabayashi, contributing to a dynamic team focused on advancing semiconductor technologies.
Conclusion
Masayo Fukuda's contributions to semiconductor technology through her patents and collaborations highlight her role as a leading inventor in her field. Her work continues to influence the development of innovative electronic solutions.