Company Filing History:
Years Active: 2024
Title: Masatoshi Okumura: Innovator in Semiconductor Technology
Introduction
Masatoshi Okumura is a notable inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. His innovative work has led to the development of a unique patent that enhances the efficiency of memory structures.
Latest Patents
Masatoshi Okumura holds a patent for a three-dimensional memory device that includes sense amplifiers with a common width and separation. This semiconductor structure features a memory array that consists of first and second bit lines, along with a sense amplifier circuit. The sense amplifier circuit comprises a first sense amplifier array containing first active sense amplifier transistors, each having an active region with a specific width. These transistors are electrically connected to the first bit lines. Additionally, there is a second sense amplifier array that includes second active sense amplifier transistors, which are also connected to the second bit lines. The design incorporates dummy active regions that are electrically inactive and located between columns of the second active sense amplifier transistors.
Career Highlights
Masatoshi Okumura is currently employed at Sandisk Technologies Inc., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing memory technology, making it more efficient and effective for various applications.
Collaborations
Throughout his career, Masatoshi has collaborated with talented individuals such as Takuma Takimoto and Masayuki Hiroi. These collaborations have fostered an environment of innovation and creativity, leading to groundbreaking advancements in the field.
Conclusion
Masatoshi Okumura's contributions to semiconductor technology, particularly through his patent for a three-dimensional memory device, highlight his role as a key innovator in the industry. His work continues to influence the development of advanced memory solutions.