Kyoto, Japan

Masashi Matsushita

USPTO Granted Patents = 6 


Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2007-2016

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6 patents (USPTO):Explore Patents

Title: Masashi Matsushita: Innovator in Semiconductor Technology

Introduction

Masashi Matsushita is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on enhancing the performance and manufacturing processes of semiconductor devices.

Latest Patents

Matsushita's latest patents include a semiconductor device and method of manufacturing the same. This invention features a silicon carbide semiconductor substrate, along with an ohmic metal layer that is joined to one surface of the substrate in an ohmic contact. The metal material used for this layer has specific properties, including negative values for both silicide formation free energy and carbide formation free energy. The ohmic metal layer can be composed of various metals, such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Career Highlights

Matsushita has built a successful career at Rohm Co., Ltd., where he continues to innovate in semiconductor technology. His expertise and dedication have led to advancements that benefit the industry and contribute to the development of more efficient electronic devices.

Collaborations

Matsushita collaborates with Yuji Okamura, a fellow innovator in the field. Their partnership has fostered a creative environment that encourages the exploration of new ideas and technologies.

Conclusion

Masashi Matsushita is a key figure in the semiconductor industry, known for his innovative patents and contributions to technology. His work continues to influence the development of advanced semiconductor devices, showcasing the importance of innovation in this field.

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