Yokohama Kanagawa, Japan

Masaru Ogawa

USPTO Granted Patents = 3 

Average Co-Inventor Count = 6.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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3 patents (USPTO):Explore Patents

Title: Masaru Ogawa: Innovator in Memory Systems

Introduction

Masaru Ogawa is a prominent inventor based in Yokohama, Kanagawa, Japan. He has made significant contributions to the field of memory systems, holding a total of 3 patents. His work focuses on enhancing the efficiency and functionality of non-volatile memory technologies.

Latest Patents

Ogawa's latest patents include innovative designs for memory systems. One notable patent describes a memory system that incorporates a plurality of non-volatile memories and a controller. This controller is connected to the memories via multiple channels and is designed to manage data transfer timing based on parameters stored in the non-volatile memory. Another patent outlines a memory system that includes a non-volatile memory and a controller configured to log command histories. This system is integrated with an information processing device that monitors log data to ensure operational accuracy.

Career Highlights

Masaru Ogawa is currently employed at Kioxia Corporation, a leading company in the memory storage industry. His work at Kioxia has positioned him as a key player in the development of advanced memory technologies. His innovative approaches have contributed to the company's reputation for excellence in memory solutions.

Collaborations

Ogawa has collaborated with notable colleagues, including Kenji Sakaue and Takeshi Nakano. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies in memory systems.

Conclusion

Masaru Ogawa's contributions to memory systems exemplify his dedication to innovation in technology. His patents reflect a deep understanding of non-volatile memory and its applications. Through his work at Kioxia Corporation, he continues to influence the future of memory technology.

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