Akishima, Japan

Masahiro Hosoi


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Akishima, JP (2012)
  • Tokyo, JP (2012)

Company Filing History:


Years Active: 2012

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2 patents (USPTO):Explore Patents

Title: Masahiro Hosoi: Innovator in Oxide Superconductor Technology

Introduction

Masahiro Hosoi is a prominent inventor based in Akishima, Japan. He has made significant contributions to the field of oxide superconductors, holding a total of 2 patents. His work focuses on improving the manufacturing processes of oxide superconductors, which are crucial for various advanced technologies.

Latest Patents

Hosoi's latest patents include a method for polishing tape-shaped substrates for oxide superconductors. This innovative method involves creating an oxide superconductor member composed of a tape-shaped substrate, an intermediate layer, and an oxide superconductor thin film layer. The polishing process is designed to achieve an average surface roughness of 2 nanometers or less, while ensuring that the in-plane directionality of the intermediate layer is 5° or less after the polishing step. This advancement is vital for enhancing the performance and reliability of oxide superconductors.

Career Highlights

Masahiro Hosoi is currently employed at Nihon Micro Coating Co., Ltd., where he continues to develop cutting-edge technologies in the field of superconductors. His expertise and innovative approaches have positioned him as a key figure in the industry.

Collaborations

Throughout his career, Hosoi has collaborated with notable colleagues, including Sanaki Horimoto and Takuya Nagamine. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in technology.

Conclusion

Masahiro Hosoi's contributions to the field of oxide superconductors demonstrate his commitment to innovation and excellence. His patents and ongoing work at Nihon Micro Coating Co., Ltd. highlight his role as a leading inventor in this critical area of technology.

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