Company Filing History:
Years Active: 2005-2009
Title: Masahiko Sonoda: Innovator in Semiconductor Technology
Introduction
Masahiko Sonoda is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative spirit and technical expertise.
Latest Patents
Sonoda's latest patents include a vertical transistor and a semiconductor integrated circuit apparatus known as the AMOS transistor. This invention features a first conduction type region, a second conduction type drain region, and a second conduction type source region, with a channel region positioned between them. The design incorporates a gate electrode on the channel region and a second conduction type base region within the drain region. Additionally, it includes multiple first conduction type emitter regions and a drain contact that connects adjacent emitter regions. Another notable patent is for a MOSFET designed for an open-drain circuit. This innovation addresses the issue of static electric charge discharge in conventional N-channel MOSFETs, enhancing the static withstand voltage through a unique configuration of N-type and P-type impurity diffusion layers.
Career Highlights
Masahiko Sonoda is currently associated with Rohm Co., Ltd., a company known for its advancements in semiconductor technology. His work has significantly impacted the development of efficient electronic components.
Collaborations
Sonoda has collaborated with notable colleagues, including Hidetoshi Nishikawa and Masahiro Sakuragi, contributing to various projects that push the boundaries of semiconductor innovation.
Conclusion
Masahiko Sonoda's contributions to semiconductor technology through his patents reflect his dedication to innovation and excellence in the field. His work continues to influence the development of advanced electronic devices.