Company Filing History:
2 out of 58 
2 out of 614 
1 out of 1 Years Active: 1988-1990
Title: Masaaki Kanayama: Innovator in Gallium Arsenide Phosphide Technology
Introduction
Masaaki Kanayama is a notable inventor based in Tsuchiura, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium arsenide phosphide (GaAsP) materials. With a total of three patents to his name, Kanayama's work has advanced the efficiency and performance of light-emitting diodes (LEDs).
Latest Patents
Kanayama's latest patents focus on methods for creating gallium arsenide phosphide mixed crystal epitaxial wafers. One of his notable inventions is a method of making a gallium arsenide phosphide mixed crystal epitaxial wafer, which includes a layer region with a discontinuous variance of composition along the thickness of the GaAsP layer. This innovation contributes to a uniform brightness in the light emission of LEDs produced from the epitaxial wafer. Another patent details a gallium arsenide phosphide mixed crystal epitaxial wafer with a graded composition, further enhancing the performance of LED arrays.
Career Highlights
Throughout his career, Kanayama has worked with prominent companies in the chemical and semiconductor industries. He has been associated with Mitsubishi Monsanto Chemical Co., Ltd. and Mitsubishi Chemical Industries Limited. His experience in these organizations has allowed him to refine his expertise in materials science and semiconductor fabrication.
Collaborations
Kanayama has collaborated with esteemed colleagues, including Hisanori Fujita and Takeshi Okano. These partnerships have fostered innovation and contributed to the advancement of technology in their field.
Conclusion
Masaaki Kanayama's contributions to gallium arsenide phosphide technology have made a significant impact on the development of efficient LED systems. His innovative patents and collaborations highlight his role as a key figure in the semiconductor industry.