Martin P Scott

Title: Martin P. Scott: Innovator in Semiconductor Technology

Introduction

Martin P. Scott is a notable inventor based in San Francisco, CA. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative methods for fabricating semiconductor devices, particularly those involving strained layers.

Latest Patents

One of Martin's latest patents involves a method of fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x. This invention comprises a technique for creating devices and circuits that utilize at least one heteroepitaxial layer under strain. The process includes growing a heteroepitaxial layer that exceeds the calculated equilibrium critical thickness for an uncapped layer on a crystalline substrate. Following the growth, the structure is processed at elevated temperatures, which enhances the performance of the semiconductor device. Another significant patent addresses the selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a silicon substrate, aimed at minimizing defects in the SiGe layer.

Career Highlights

Martin P. Scott is currently associated with Hewlett-Packard Company, where he continues to advance semiconductor technology. His innovative approaches have positioned him as a key figure in the industry, contributing to the development of high-performance electronic devices.

Collaborations

Throughout his career, Martin has collaborated with esteemed colleagues such as Theodore I. Kamins and David B. Noble. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Martin P. Scott's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in technology.