Munich, Germany

Markus Hauser


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations of Markus Hauser in Thin Film Technology

Introduction

Markus Hauser is a notable inventor based in Munich, Germany. He has made significant contributions to the field of thin film technology, particularly with his innovative designs and patents. His work focuses on enhancing the performance of surface acoustic wave (SAW) devices.

Latest Patents

One of Markus Hauser's key patents is the "Thin Film SAW Device." This invention comprises a carrier substrate, a temperature coefficient of frequency (TCF) compensating layer, a piezoelectric layer, and an interdigital transducer (IDT) electrode positioned atop the piezoelectric layer. A functional layer is strategically arranged between the piezoelectric layer and the TCF compensating layer to further minimize the TCF. The material properties of this functional layer are designed to match those of the piezoelectric layer in terms of acoustic velocity, density, and stiffness, ensuring that deviations do not exceed 10% without exhibiting piezoelectric effects. The functional layer may share the same crystalline constitution as the piezoelectric layer but lacks piezoelectric properties.

Career Highlights

Markus Hauser is currently employed at Rf360 Singapore Pte. Ltd., where he continues to develop cutting-edge technologies in the field of thin films. His expertise and innovative mindset have positioned him as a valuable asset in his organization.

Collaborations

Throughout his career, Markus has collaborated with talented individuals such as Ingo Bleyl and Matthias Knapp. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Markus Hauser's contributions to thin film technology, particularly through his patent for the Thin Film SAW Device, highlight his innovative spirit and dedication to advancing the field. His work continues to influence the development of high-performance devices in various applications.

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