Mark N Ruberto

Title: Mark N Ruberto: Innovator in Photochemical Etching

Introduction

Mark N Ruberto, an accomplished inventor based in New York, NY, has made significant strides in the field of semiconductor technology. He holds a unique patent that contributes to advancements in the methods of photochemical etching, which are essential for the precision manufacturing of semiconductor devices.

Latest Patents

Ruberto's notable patent is titled "Method of localized photochemical etching of multilayered semiconductor." This innovative technique takes advantage of the sensitivity of localized photochemical etching to the optical and electrical properties of multilayered semiconductor materials. The method allows for selective etching of a laterally extending undercut in a buried layer, enhancing the manufacturing process of semiconductors. By immersing the semiconductor body in a specially formulated etching solution and directing a beam of light of appropriate wavelength and intensity onto the semiconductor solution interface, this method efficiently etches buried layers laterally, offering improved control over the etching process.

Career Highlights

Mark N Ruberto has built a rewarding career at Columbia University, where he engages in research and development efforts that push the boundaries of semiconductor technology. His contributions have significantly influenced both academic and practical applications in the field.

Collaborations

In his endeavors, Ruberto collaborates with esteemed colleagues, including Alan E Willner, who share his passion for innovation in semiconductor methods. Their partnership has fostered an environment of creativity and exploration, leading to noteworthy advancements.

Conclusion

As an inventor, Mark N Ruberto exemplifies the spirit of innovation and contributes to the ever-evolving field of semiconductor technology. His patented method of localized photochemical etching not only showcases his ingenuity but also marks a pivotal development within the industry, with potential implications for further advancements in the future.