Mark L Rineheimer

Title: Mark L Rineheimer: Innovator in Semiconductor Fabrication

Introduction

Mark L Rineheimer is a notable inventor based in Luzerne, PA (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods of fabrication.

Latest Patents

Mark L Rineheimer holds a patent for a method of fabricating UMOS semiconductor devices. This patent describes a process that includes a blanket implant of an N type dopant into a substrate surface to form source regions. It also involves a high energy implant of a P type dopant into the substrate for body regions. The method further details an etch through a hard mask to create trenches and mesas, with each mesa having a source region at its top and a body region below. Additionally, the process includes providing a gate dielectric on the sidewalls of the trenches and redistributing the dopants to ensure that the body regions extend deeper into the substrate beneath the centers of the mesas than adjacent to the walls of the trenches. Contact windows are etched in the mesas to facilitate electrical contact with the source and body regions.

Career Highlights

Mark L Rineheimer is associated with Harris Corporation, where he has been able to apply his expertise in semiconductor fabrication. His work has contributed to advancements in the efficiency and effectiveness of semiconductor devices.

Collaborations

Some of his notable coworkers include Christopher L Rexer and John M Neilson. Their collaborative efforts have likely played a role in the development of innovative technologies within the company.

Conclusion

Mark L Rineheimer's contributions to semiconductor fabrication highlight his role as an innovator in the field. His patent and work at Harris Corporation demonstrate his commitment to advancing technology in this critical area.