Company Filing History:
Years Active: 2004-2008
Title: Mark G. Daffron: Innovator in Planarization Technologies
Introduction
Mark G. Daffron is a notable inventor based in Rolla, MO (US), recognized for his contributions to the field of lithography processing. With a total of 2 patents, Daffron has made significant advancements in planarization methods that enhance the efficiency and effectiveness of various lithography applications.
Latest Patents
Daffron's latest patents include a method for contact planarization that addresses the challenges of substrate surfaces with varying topographic feature densities. This invention utilizes thermally curable, photo-curable, or thermoplastic materials to achieve globally planarized surfaces, which are essential for lithography applications. The methods developed by Daffron can be applied in single-layer, bilayer, or multi-layer processing, improving the photolithography process latitude significantly. Another patent focuses on contact planarization materials that generate minimal volatile byproducts during the curing process. These materials are versatile and can be used in various applications, including microelectromechanical systems (MEMS), packaging, and photonics.
Career Highlights
Mark G. Daffron is currently employed at Brewer Science, Inc., where he continues to innovate and develop new technologies in the field of lithography. His work has been instrumental in advancing the capabilities of planarization processes, making them more efficient and environmentally friendly.
Collaborations
Throughout his career, Daffron has collaborated with esteemed colleagues such as Wu-Sheng Shih and James E. Lamb, III. These collaborations have further enriched his research and development efforts, leading to groundbreaking advancements in the industry.
Conclusion
Mark G. Daffron's contributions to planarization technologies have significantly impacted the field of lithography processing. His innovative patents and ongoing work at Brewer Science, Inc. continue to push the boundaries of what is possible in this critical area of technology.