Mark A Gose

Title: Mark A Gose: Innovator in Field-Effect Transistor Technology

Introduction

Mark A Gose is a notable inventor based in Kokomo, IN (US). He has made significant contributions to the field of electronics, particularly in the area of field-effect transistors (FETs). His innovative work has led to the development of a patented technology that enhances the performance and reliability of FETs in various applications.

Latest Patents

Mark A Gose holds a patent for "Current and temperature sensing of standard field-effect transistors." This invention provides an apparatus and method for determining the junction temperature (Tj) and drain-source current (Ids) of standard FETs within a multi-FET module. The technology includes a control integrated circuit (IC) that manages multiple three-terminal standard FETs within the same package. It calculates Tj and Ids for one or more FETs in various packages while protecting each FET against short circuit faults. This innovation allows for high current transients, such as inrush currents from a lamp load.

Career Highlights

Mark A Gose is currently employed at Delphi Technologies, Inc., where he continues to advance his work in semiconductor technology. His expertise in FETs has positioned him as a valuable asset in the field of electronics.

Collaborations

Throughout his career, Mark has collaborated with notable colleagues, including Jack L Glenn and Peter Allan Laubenstein. These partnerships have contributed to the development and refinement of his innovative technologies.

Conclusion

Mark A Gose's contributions to the field of field-effect transistors exemplify the impact of innovation in electronics. His patented technology not only enhances the performance of FETs but also ensures their reliability in various applications.