Company Filing History:
Years Active: 1993
Title: Marino J Martinez: Innovator in Complementary Heterostructure FET Technology
Introduction
Marino J Martinez is a notable inventor based in Dayton, OH (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of complementary field effect transistors (FETs). His innovative work focuses on utilizing group III/group V compound semiconductors, especially on InP substrates.
Latest Patents
Marino J Martinez holds a patent for "Making staggered complementary heterostructure FET." This invention addresses the need for implementing complementary FETs in group III/group V compound semiconductors. The patent highlights the outstanding n-channel performance demonstrated in InGaAs channel devices on InP substrates. Preliminary experiments suggest that GaAsSb channel devices will yield optimal p-heterostructure FETs (HFETs). The disclosed technique allows for the fabrication of both n- and p-channel devices on the same substrate, showcasing the potential of complementary HFET (C-HFET) technology.
Career Highlights
Marino J Martinez is associated with the USA as represented by the Secretary of the Navy. His work has been instrumental in advancing semiconductor technology, particularly in the integration of n-channel and p-channel devices. His innovative approaches have paved the way for enhanced performance in electronic devices.
Collaborations
Some of his notable coworkers include Fritz L Schuermeyer and Paul E Cook. Their collaborative efforts have contributed to the success of various projects in the field of semiconductor research.
Conclusion
Marino J Martinez is a distinguished inventor whose work in complementary heterostructure FET technology has made a significant impact in the semiconductor industry. His innovative approaches continue to influence advancements in electronic devices.