Marie E Burnham

Title: Marie E Burnham: Innovator in Semiconductor Technology

Introduction

Marie E Burnham is a notable inventor based in Phoenix, AZ (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of methods for isolating MOS transistors. Her innovative approach has led to advancements in the efficiency and performance of electronic devices.

Latest Patents

Marie E Burnham holds 1 patent for her invention titled "Forming depthwise isolation by selective oxygen/nitrogen deep implant." This patent describes a method for creating MOS transistors where the source and drain contacts are isolated from the common substrate. The technique involves using the gate conductor to mask a high dose, high-energy implant that forms a thin dielectric region within the substrate beneath the source and drain regions, while keeping the channel region unaffected. This method ensures that the gate and channel regions remain free from implant damage, enhancing the overall reliability of the device.

Career Highlights

Throughout her career, Marie has worked with Motorola Corporation, where she has applied her expertise in semiconductor fabrication. Her work has been instrumental in advancing the technology used in modern electronic devices.

Collaborations

Marie has collaborated with notable colleagues such as Charles J Varker and Syd R Wilson, contributing to the collective knowledge and innovation within the semiconductor industry.

Conclusion

Marie E Burnham's contributions to semiconductor technology exemplify the impact of innovative thinking in the field of electronics. Her patent and work at Motorola Corporation highlight her role as a key figure in advancing technology that shapes our modern world.