Budapest, Hungary

Maria Somogyi

This inventor holds 1 USPTO granted patent. Top assignee: Magyar Tudomanyos Akademia Muszaki Fizikai Kutato Intezete. Active years: 1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Maria Somogyi. Retrieved from https://idiyas.com/inventor/maria-somogyi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 23(Granted Patents)


Company Filing History:


Years Active: 1991

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1 patent (USPTO):Explore Patents

Title: Maria Somogyi: Innovating Layer Thickness Measurement

Introduction

Maria Somogyi, a prominent inventor based in Budapest, Hungary, has made significant contributions to the field of measuring technology. With her innovative approach, she has developed a patent that showcases her expertise in scientific measurement techniques.

Latest Patents

Maria is credited with one patent titled "Method and apparatus for determining the layer thickness of," which reflects her dedication to advancing measurement methodologies. This patent underscores her technical proficiency and innovative spirit.

Career Highlights

Maria Somogyi is associated with the Research Institute for Technical Physics and Material Science, part of the Hungarian Academy of Sciences. Her work at this esteemed institution highlights her commitment to research and the application of technology in practical scenarios.

Collaborations

Throughout her career, Maria has collaborated with notable colleagues, including Gyorgy Ferenczi and Katalin Erdelyi. These partnerships have enriched her research endeavors and have contributed to the advancement of knowledge in her field.

Conclusion

Maria Somogyi stands out as a talented inventor whose work has potential implications across various applications. Her dedication to innovating measurement techniques positions her as an important figure in the realm of scientific research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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