Margaret E Fuchs

Title: The Innovations of Margaret E. Fuchs

Introduction

Margaret E. Fuchs is a notable inventor based in Mesa, AZ, who has made significant contributions to the field of semiconductor technology. With a focus on voltage regulation, his work has led to the development of innovative solutions that enhance the performance of electronic devices.

Latest Patents

Margaret E. Fuchs holds a patent for a "Low voltage metal oxide semiconductor threshold referenced voltage regulator and method of using - Depletion mode pass transistor." This invention accepts an input voltage and provides a regulated output voltage that is referenced to the threshold voltage of a MOSFET. The regulated output voltage is directly proportional to the ratio of resistors involved. The MOSFET enables and disables the voltage regulator, allowing for multiple voltage regulators with various output potentials to be realized on the same semiconductor die. This design produces the same threshold potential for the MOSFETs, making the output potentials selectable using the resistor ratios. Additionally, a constant current source is incorporated to reduce output voltage variation due to input voltage fluctuations.

Career Highlights

Margaret E. Fuchs is associated with Semiconductor Components Industries, LLC, where he has contributed to advancements in semiconductor technology. His expertise in voltage regulation has positioned him as a key player in the industry, driving innovation and efficiency in electronic components.

Collaborations

Some of his notable coworkers include David M. Heminger and Stephen P. Robb, who have collaborated with him on various projects within the semiconductor field.

Conclusion

Margaret E. Fuchs is a distinguished inventor whose work in voltage regulation has had a lasting impact on semiconductor technology. His innovative patent demonstrates his commitment to enhancing electronic performance and reliability.