Company Filing History:
Years Active: 1991
Title: Innovations of Marek E. Mierzwinski in Heterostructure Transistors
Introduction
Marek E. Mierzwinski is an accomplished inventor based in Stanford, California, who has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a groundbreaking patent that enhances the performance of charge injection transistors through a novel architecture.
Latest Patents
Marek holds a patent titled "Heterostructure transistor using real-space electron transfer." This technology represents a substantial advancement in transistor design, featuring a channel layer composed of In.sub.0.25 Ga.sub.0.75 As, bolstered by a buffer layer of Al.sub.0.3 Ga.sub.0.7 As. The intricate structure includes a barrier layer of Al.sub.0.1 Ga.sub.0.9 As overlaid with a GaAs layer, forming an efficient electron drift region.
This design facilitates an improved flow of electrons, as they are heated and energized to escape across the barrier and move towards the collector electrode, significantly enhancing high-frequency performance. Notably, Marek's invention allows for a deeper quantum well for conduction electrons, reducing leakage at room temperature and providing faster transit times compared to prior devices.
Career Highlights
Marek has established himself in the tech industry, particularly through his association with Hewlett-Packard Company, where he continues to leverage his expertise in semiconductor innovations. His contributions have made a meaningful impact on the development of advanced electronic devices.
Collaborations
Marek E. Mierzwinski collaborates with fellow innovators Nicolas J. Moll and Mark R. Hueschen, working together to push the boundaries of technology in their field. Their combined efforts have bolstered the advancements in high-frequency device performance, showcasing the power of teamwork in engineering and innovation.
Conclusion
Marek E. Mierzwinski's inventive work, particularly in the realm of heterostructure transistors, highlights the importance of innovation in semiconductor technology. His contributions not only advance our understanding of transistor functionality but also pave the way for future developments in high-frequency electronic devices, reaffirming his status as a noteworthy inventor in the tech industry.