Mao-Tsung Chen

Title: The Innovations of Mao-Tsung Chen

Introduction

Mao-Tsung Chen is a notable inventor based in Taoyuan Shiang, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patented method that enhances the fabrication of source/drain devices.

Latest Patents

Mao-Tsung Chen holds a patent for a "Method for fabricating source/drain devices." This method involves providing a semiconductor substrate with a gate formed thereon. A first doped area is created on one side of the gate, while a second doped area is formed on the opposite side, maintaining a predetermined distance from the gate. A patterned photo resist layer is then applied, allowing for precise implantation and annealing to form a dual diffusion area on the second side of the gate.

Career Highlights

Mao-Tsung Chen is currently employed at Vanguard International Semiconductor Corporation. His work at this company has been instrumental in advancing semiconductor fabrication techniques. With a focus on innovation, he continues to contribute to the field through his research and development efforts.

Collaborations

Mao-Tsung Chen has collaborated with several talented individuals in his field, including Wen-Tsung Wang and Yi-Tsung Jan. These collaborations have fostered a creative environment that encourages the exchange of ideas and technological advancements.

Conclusion

Mao-Tsung Chen's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the industry and inspire future innovations.