Osaka, Japan

Makoto Takada


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Location History:

  • Osaka, JP (2008 - 2009)
  • Hyogo, JP (2010)

Company Filing History:


Years Active: 2008-2010

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3 patents (USPTO):Explore Patents

Title: The Innovations of Makoto Takada

Introduction

Makoto Takada is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 3 patents to his name, Takada continues to push the boundaries of innovation in his industry.

Latest Patents

One of his latest patents is titled "Method for manufacturing semiconductor optical device." This method involves several steps, including forming a p-type cladding layer, a capping layer that is selectively etchable, and a through film. The process also includes ion implantation to create a window structure and the selective removal of the capping layer using a chemical solution. Another notable patent is "Semiconductor device and manufacturing method therefor." This patent describes a laser diode that features a first n-cladding layer that is lattice-matched to an n-semiconductor substrate, along with a second n-cladding layer supported by the first. The inserted layer between these cladding layers contains the same elements and composition ratios as the first n-cladding layer, with a lower composition ratio of In.

Career Highlights

Makoto Takada is currently employed at Mitsubishi Electric Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

Takada has collaborated with notable coworkers, including Yoshihiko Hanamaki and Kenichi Ono. Their combined efforts contribute to the innovative projects at Mitsubishi Electric Corporation.

Conclusion

Makoto Takada's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor devices and manufacturing methods.

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