Makiko Fujinami

Title: Makiko Fujinami: Innovator in Wafer Defect Measurement

Introduction

Makiko Fujinami is a prominent inventor based in Uji, Japan. She has made significant contributions to the field of semiconductor technology, particularly in the measurement of defects in silicon wafers. Her innovative approach has the potential to enhance the quality and reliability of semiconductor devices.

Latest Patents

Makiko Fujinami holds a patent for a "Wafer defect measuring method and apparatus." This invention involves measuring the depth and relative dimensional factors of defects present in the interior of silicon wafers. The method utilizes a laser beam with energy exceeding the band gap of silicon, which is radiated obliquely to the wafer. The scattered beam from defects in the subsurface layer is detected by an image pick-up device. By varying the temperature of the wafer, the intensity of the scattered beam is measured, taking into account the light absorbance and penetration depth of silicon at different temperatures. This innovative technique allows for accurate determination of internal defects that cause light scattering.

Career Highlights

Makiko Fujinami is associated with Toshiba Ceramics Co., Ltd., where she applies her expertise in semiconductor technology. Her work has been instrumental in advancing the methods used for defect measurement in silicon wafers, contributing to the overall improvement of semiconductor manufacturing processes.

Collaborations

Makiko has collaborated with notable colleagues, including Hiroyuki Goto and Hiroyuki Saito. These collaborations have fostered a productive environment for innovation and research within the field.

Conclusion

Makiko Fujinami's contributions to wafer defect measurement exemplify her dedication to advancing semiconductor technology. Her innovative methods are paving the way for improved quality in semiconductor devices, showcasing the importance of her work in the industry.