Company Filing History:
Years Active: 2019
Title: Innovations by Mahmoud Imdoukh in Multi-Level STT-MRAM Devices
Introduction
Mahmoud Imdoukh is an accomplished inventor based in Safat, Kuwait. He has made significant contributions to the field of memory storage technology, particularly in the development of multi-level STT-MRAM devices. His innovative approach focuses on minimizing energy consumption during data transitions, which is crucial for enhancing the efficiency of memory systems.
Latest Patents
One of Mahmoud Imdoukh's notable patents is titled "Minimizing two-step and hard state transitions in multi-level STT-MRAM devices." This patent addresses the challenge of high energy requirements during data transitions in multi-level MRAM (MLC MRAM) cells. The invention involves dividing a new data block into sub-groups of bits, each containing at least two bits. By assigning these sub-groups to specific data bit locations in memory, the system can effectively compare received bits with existing sub-groups to identify "hot bits." The encoding flag for each subgroup is determined by XORing their most significant bits, which are then complemented to optimize data storage.
Career Highlights
Mahmoud Imdoukh is affiliated with Kuwait University, where he continues to advance research in memory technologies. His work has garnered attention for its potential to revolutionize data storage solutions, making them more energy-efficient and reliable.
Collaborations
Mahmoud has collaborated with esteemed colleagues, including Imtiaz Ahmad and Mohammad G H Alfailakawi. Their combined expertise contributes to the innovative research environment at Kuwait University.
Conclusion
Mahmoud Imdoukh's contributions to the field of multi-level STT-MRAM devices exemplify the importance of innovation in technology. His patent work not only addresses critical challenges in memory storage but also paves the way for future advancements in the industry.